IndiumV3, Chine, Analysis, bibRecord, 001377

Improved contrast polymer light-emitting diode with optical interference layers

Identifieur interne : 001377 ( Chine/Analysis ); précédent : 001376; suivant : 001378

Improved contrast polymer light-emitting diode with optical interference layers

Auteurs : RBID : Pascal:07-0248358

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Injection porteur charge, Epaisseur, Interférence optique, Polymère, Etain oxyde, Indium oxyde, 8560J.
Wicri :
- concept : Polymère.

English descriptors

KwdEn :
- Charge carrier injection, Indium oxide, Light emitting diode, Optical interference, Polymer, Thickness, Tin oxide.

Abstract

An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180° out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device.

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Pascal:07-0248358

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improved contrast polymer light-emitting diode with optical interference layers</title>
<author><name sortKey="Liu, H Y" uniqKey="Liu H">H. Y. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications, Shanghai University, Jiading Campus</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University</s1>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sun, R G" uniqKey="Sun R">R. G. Sun</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications, Shanghai University, Jiading Campus</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yang, K X" uniqKey="Yang K">K. X. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Optoelectronic Polymer and Devices, South China University of Technology</s1>
<s2>Guangzhou, Guangdong 510640</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou, Guangdong 510640</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Peng, J B" uniqKey="Peng J">J. B. Peng</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Optoelectronic Polymer and Devices, South China University of Technology</s1>
<s2>Guangzhou, Guangdong 510640</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou, Guangdong 510640</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Cao, Y" uniqKey="Cao Y">Y. Cao</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Optoelectronic Polymer and Devices, South China University of Technology</s1>
<s2>Guangzhou, Guangdong 510640</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guangzhou, Guangdong 510640</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Joo, S K" uniqKey="Joo S">S. K. Joo</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University</s1>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">07-0248358</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0248358 INIST</idno>
<idno type="RBID">Pascal:07-0248358</idno>
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<seriesStmt><idno type="ISSN">0022-2313</idno>
<title level="j" type="abbreviated">J. lumin.</title>
<title level="j" type="main">Journal of luminescence</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier injection</term>
<term>Indium oxide</term>
<term>Light emitting diode</term>
<term>Optical interference</term>
<term>Polymer</term>
<term>Thickness</term>
<term>Tin oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term>
<term>Injection porteur charge</term>
<term>Epaisseur</term>
<term>Interférence optique</term>
<term>Polymère</term>
<term>Etain oxyde</term>
<term>Indium oxyde</term>
<term>8560J</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180° out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device.</div>
</front>
</TEI>
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<fA03 i2="1"><s0>J. lumin.</s0>
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<fA08 i1="01" i2="1" l="ENG"><s1>Improved contrast polymer light-emitting diode with optical interference layers</s1>
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<fA11 i1="01" i2="1"><s1>LIU (H. Y.)</s1>
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<fA11 i1="02" i2="1"><s1>SUN (R. G.)</s1>
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<fA11 i1="03" i2="1"><s1>YANG (K. X.)</s1>
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<fA11 i1="04" i2="1"><s1>PENG (J. B.)</s1>
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<fA11 i1="05" i2="1"><s1>CAO (Y.)</s1>
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<fA11 i1="06" i2="1"><s1>JOO (S. K.)</s1>
</fA11>
<fA14 i1="01"><s1>Key Laboratory of Advanced Display and System Applications, Shanghai University, Jiading Campus</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Research Institute of Advanced Materials, School of Materials Science and Engineering, Seoul National University</s1>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institute of Optoelectronic Polymer and Devices, South China University of Technology</s1>
<s2>Guangzhou, Guangdong 510640</s2>
<s3>CHN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>207-210</s1>
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<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180° out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
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<fC03 i1="01" i2="X" l="FRE"><s0>Diode électroluminescente</s0>
<s5>02</s5>
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<s5>02</s5>
</fC03>
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<s5>02</s5>
</fC03>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Inyección portador carga</s0>
<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>15</s5>
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<s5>15</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Polímero</s0>
<s5>15</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Etain oxyde</s0>
<s5>17</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>17</s5>
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<s5>17</s5>
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<s5>18</s5>
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<s5>18</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>18</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>8560J</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>162</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Improved contrast polymer light-emitting diode with optical interference layers

Improved contrast polymer light-emitting diode with optical interference layers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri